Sub-micrometer plasma-enhanced chemical vapor deposition using an atmospheric pressure plasma jet localized by a nanopipette scanning probe microscope

Abstract We developed a localized plasma-enhanced chemical vapor deposition (PE-CVD) technique to deposit silicon oxide with sub-micrometer width on substrate using an atmospheric pressure plasma jet (APPJ) irradiated from nanopipette nozzle. To realize fine material deposition, hexamethyldisiloxane (HMDSO) was blown into the helium APPJ aperture of nanpopipette length limited size nanopipette. The irradiation distance controlled shear-force positioning scanning probe microscopy (SPM). proposed system successfully deposited dots substrate. After topography surface observed by nanopipette, which can be used as SPM probe. PE-CVD properties were systematically investigated varying parameters. amount could flow rate carrier gas HMDSO vapor, time, and nanopipette–substrate distance.